Peças electrónicas : GT10J31206

Fabricante : Toshiba Semiconductor

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Descrição : SILICON CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

Temperatura : Min °C | Max °C

Datasheet : GT10J31206 PDF

• GT10J311
• GT10J312
• GT10J312(SM)
• GT10J31206
• GT10J312SM
• GT10J312_06