Peças electrónicas : BUL642D2G

Fabricante : Semiconductor

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Descrição : High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

Temperatura : Min °C | Max °C

Datasheet : BUL642D2G PDF

• BUL642D2
• BUL642D2G